Perform DC analysis of the fixed-bias BJT amplifier with a temperature stabilizing resistor below to find the
operating point of BJT. Calculate all related voltages and currents in
the circuit. Used information obtained from DC analysis to further
perform AC analysis to find the small signal voltage gain, input and
output impedances of this circuit at mid-band frequency.
Design a fixed-bias BJT amplifier having a temperature stabilizing resistor RE so that its operating point is as shown in the IV graph. If only [commercially availble resistors] were used, how much would the Q-point deviate from the desired specification.
Show derivation of the AC resistance of the Base-Emitter junction (re) of the BJT circuit below in terms of emitter current. Proof that the input impedance Zb at the Base seen by the input small signal Ib is βre.
Design a fixed-bias BJT amplifier so that it operates as in the IV graph shown. If only [commercially available resistors] were used, how much would the Q-point deviate from desired specifications.
Perform DC analysis of the fixed-bias BJT amplifier below to find the operating point of BJT. Calculate all related voltages and currents in the circuit. Use information obtained from DC analysis to further perform AC analysis to find the small signal voltage gain, input and output impedances of this circuit at mid-band frequency.
Draw a voltage transfer characteristics (VTC) Vout v.s. Vin of a resistor-transistor "NOR" gate circuit in the figure for Vin in a range from 0 V to 5 V, given the voltage across forward-biased diode and transistor current gain being 0.7 V and 30, respectively.
Draw a voltage transfer characteristics (VTC) Vout v.s. Vin of a diode-transistor "NAND" gate circuit in the figure for Vin in a range from 0 V to 5 V, given the voltage across forward-biased diode and transistor current gain being 0.7 V and 30, respectively.